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Image Search Results
Journal: Nature Communications
Article Title: Ambipolar blend-based organic electrochemical transistors and inverters
doi: 10.1038/s41467-022-33264-2
Figure Lengend Snippet: a Out-of-plane XRD of pristine materials and the 95:5 w:w PrC 60 MA:p(g2T-TT) blend and the Grazing Incidence Wide-Angle X-ray Scattering (GIWAXS) measurement of the blend (inset). Dotted lines at 2 θ = 3.1° and 5.7° are associated with the (100) peaks of PrC 60 MA and p(g2T-TT), respectively. All other peaks are higher (h00) reflections of PrC 60 MA. b Scherrer analysis of the coherence length (L c ) of PrC 60 MA crystals in pristine and 95:5 blend films using a pseudo-voigt function fitting. In this analysis the FWHM of each (h00) reflection, \documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$${\triangle }_{q}$$\end{document} △ q , is plotted vs the square reflection order, m 2 , and the extrapolation to the 0 th order provides the L c , (Supplementary Fig. ). c Back-Scattered Electrons (BSE) detector cross-section High Resolution Scanning Electron Microscopy (HRSEM) images of the p(g2T-TT) (left), 95:5 blend (middle), and PrC 60 MA (right) films following a Vapor Phase Infiltration (VPI) ‘staining’ process. The bright contrast is due to nucleation and growth of ZnO particles. The distribution of ZnO particles throughout the blend film, in contrast to the pristine PrC 60 MA film, corroborates the bulk-heterojunction morphology. The scale bar is 200 nm.
Article Snippet:
Techniques: Electron Microscopy, Staining